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	Semiconductor laser devices utilizing light reflective metallic layers
	CAPLAN, SANDOR; LAMORTE, MICHAEL F.
	1972-10-24
著作权人	RCA CORPORATION
专利号	US3701047
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser devices utilizing light reflective metallic layers
英文摘要	A P-N junction semiconductor laser diode in which light reflective metallic layers are provided on the optically flat opposed surfaces of the diode. A transparent insulating coating having a particular thickness covers each of the semiconductor end surfaces. A thin metallic layer is disposed on each of the insulating layers. One of the metallic layers is sufficiently thick to totally reflect light emitted from the P-N junction, whereas the other metallic layer is such as to reflect approximately 99 percent of the radiated light. A transparent insulating material protects the exposed surfaces of each of the metallic layers.
公开日期	1972-10-24
申请日期	1966-08-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45728]
专题	半导体激光器专利数据库
作者单位	RCA CORPORATION
推荐引用方式 GB/T 7714	CAPLAN, SANDOR,LAMORTE, MICHAEL F.. Semiconductor laser devices utilizing light reflective metallic layers. US3701047. 1972-10-24.

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