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	Multiple-wavelength laser diode array using quantum well band filling
	BOUR, DAVID P.; BRINGANS, ROSS D.
	1999-11-09
著作权人	XEROX CORPORATION
专利号	US5982799
国家	美国
文献子类	授权发明
其他题名	Multiple-wavelength laser diode array using quantum well band filling
英文摘要	A multiple-wavelength laser diode array is described. A wavelength span of several tens of nanometers is achieved through band-filling of a quantum well active region. A multiple-wavelength array is formed by selectively introducing different amounts of optical loss into the array elements, to affect the threshold current density. With minimum losses, the laser oscillates at a long wavelength, while an element with high loss will undergo more bandfilling and be forced to emit at a shorter wavelength. To illustrate the structures which incorporate these additional, selective losses, a 2-red-wavelength AlGaInP laser array is described. In preferred embodiments, increased optical loss is achieved in an SBR type laser by narrowing the ridge region, or by reducing its thickness. In another type of laser, increased optical loss is achieved by a very thin upper cladding layer causing increased optical absorption in a close overlying cap or metal layer.
公开日期	1999-11-09
申请日期	1997-03-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45720]
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	BOUR, DAVID P.,BRINGANS, ROSS D.. Multiple-wavelength laser diode array using quantum well band filling. US5982799. 1999-11-09.

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