QQ客服 官方微博 反馈留言

	GaSb-clad mid-infrared semiconductor laser
	GOYAL, ANISH; TURNER, GEORGE
	2004-11-02
著作权人	MASSACHUSETTS INSTITUTE OF TECHNOLOGY
专利号	US6813296
国家	美国
文献子类	授权发明
其他题名	GaSb-clad mid-infrared semiconductor laser
英文摘要	A semiconductor laser operating in the mid-infrared region is described. In one particular embodiment, the semiconductor laser is provided having first and second cladding layers consisting essentially of GaSb that surround an active core, wherein the index of refraction of the first and second cladding layers is less than but close to the index of refraction of active core. The semiconductor laser in accordance with this invention has a low divergence angle with a high power efficiency. In an alternate embodiment, the semiconductor laser is provided having first and second cladding layers consisting essentially of AlxGa1-xAsySb1-y that surround the active core with an aluminum mole fraction between 0 and 25 percent. The index of refraction of the first and second cladding layers consisting essentially of AlxGa1-xAsySb1-y can be adjusted to match a variety of types of active cores and to provide a pre-determined divergence.
公开日期	2004-11-02
申请日期	2002-04-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45667]
专题	半导体激光器专利数据库
作者单位	MASSACHUSETTS INSTITUTE OF TECHNOLOGY
推荐引用方式 GB/T 7714	GOYAL, ANISH,TURNER, GEORGE. GaSb-clad mid-infrared semiconductor laser. US6813296. 2004-11-02.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。