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	Semiconductor laser element, semiconductor etchant, and method of fabricating the semiconductor laser element
	SHIOJIMA, TAKESHI; YABUSAKI, KEIICHI; OHKUBO, MICHIO
	2005-02-08
著作权人	THE FURUKAWA ELECTRIC CO., LTD.
专利号	US6853664
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser element, semiconductor etchant, and method of fabricating the semiconductor laser element
英文摘要	The semiconductor laser element comprises, from bottom to top, the p-AlxGa1−xAs upper clad layer, p-AlyGa1−yAs resistance control layer, and p-GaAs cap layer (where x>y>0.2). A portion of only the resistance control layer and cap layer is selectively etched. The etchant used for this etching is a mixture of organic acid and hydrogen peroxide based mixture, has such a composition such that the ratio of dissolution rate of the upper clad layer to the cap layer is between 10 and 20, and pH is between 7.4 and 7.6.
公开日期	2005-02-08
申请日期	2003-02-25
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45629]
专题	半导体激光器专利数据库
作者单位	THE FURUKAWA ELECTRIC CO., LTD.
推荐引用方式 GB/T 7714	SHIOJIMA, TAKESHI,YABUSAKI, KEIICHI,OHKUBO, MICHIO. Semiconductor laser element, semiconductor etchant, and method of fabricating the semiconductor laser element. US6853664. 2005-02-08.

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