All-Solution-Processed, High-Performance n-Channel Organic Transistors and Circuits: Toward Low-Cost Ambient Electronics

CORC > 上海有机化学研究所 > 中国科学院上海有机化学研究所 > 上海有机化学研究所

	All-Solution-Processed, High-Performance n-Channel Organic Transistors and Circuits: Toward Low-Cost Ambient Electronics
	Zhao Y(赵岩) ; Di ZA(狄重安) ; Gao XK(高希珂) ; Hu YB(胡云宾) ; Guo YL(郭云龙) ; Zhang L(张磊) ; Liu YQ(刘云圻) ; Wang JZ(王吉政) ; Hu WP(胡文平) ; Zhu DB(朱道本)
刊名	Adv. Mater.
	2011
卷号	23 期号:21 页码:2448-2453
ISSN号	0935-9648
其他题名	全溶液制备高性能的n-沟道有机晶体管和电路: 面向低成本的空气电子学
英文摘要	Exploration of high-performance solution-processed n-channel organic transistors with excellent stability is a critical issue for the development of powerful printed circuits. Solution-processed, bottom-gate transistors exhibiting a record electron mobility of up to 1.2 cm(2) V(-1) s(-1) are reported. The devices show excellent stability, which enables the construction of all-solution-processed flexible circuits with all fabrication procedures performed in air.
学科主题	高分子化学
收录类别	SCI
原文出处	http://dx.doi.org/10.1002/adma.201004588
语种	英语
WOS记录号	WOS:000291732000008
公开日期	2013-08-21
内容类型	期刊论文
源URL	[http://202.127.28.38/handle/331003/27817]
专题	上海有机化学研究所_上海有机化学研究所
推荐引用方式 GB/T 7714	Zhao Y,Di ZA,Gao XK,et al. All-Solution-Processed, High-Performance n-Channel Organic Transistors and Circuits: Toward Low-Cost Ambient Electronics[J]. Adv. Mater.,2011,23(21):2448-2453.
APA	赵岩.,狄重安.,高希珂.,胡云宾.,郭云龙.,...&朱道本.(2011).All-Solution-Processed, High-Performance n-Channel Organic Transistors and Circuits: Toward Low-Cost Ambient Electronics.Adv. Mater.,23(21),2448-2453.
MLA	赵岩,et al."All-Solution-Processed, High-Performance n-Channel Organic Transistors and Circuits: Toward Low-Cost Ambient Electronics".Adv. Mater. 23.21(2011):2448-2453.