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	半導体レーザ素子とその製造方法
	中西 千登勢; 瀧口 治久; 工藤 裕章; 菅原 聰
	2000-06-30
著作权人	シャープ株式会社
专利号	JP3084042B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ素子とその製造方法
英文摘要	PURPOSE:To enable a semiconductor laser element to stably oscillate laser rays in a single longitudinal mode and to efficiently emit laser rays in a single longitudinal mode and to efficiently emit laser rays of high power by a method wherein a rugged part is formed through a wet etching method and a dry etching method. CONSTITUTION:An optical waveguide layer 5 is formed on the upside of a semiconductor substrate 1, and a laminated structure 12 where a first clad layer 2, an active layer 3, and a second clad layer 6 are laminated in this sequence is provided onto a prescribed region C on the layer 5. A rugged part of periodic structure possessed of a certain period is provided to regions A and B on the layer 5 where the structure 12 is not formed to form a first diffraction grating structure 13 and a second diffraction grating structure 14. In this case, the surface of the region A is etched through a wet etching method and the surface of the region B is etched by a dry etching method. The structure 13 is formed into a periodic structure of sine waves in cross section, and the structure 14 is formed into a periodic structure of rectangular waves in cross section. By this setup, a semiconductor laser of this design can efficiently emit laser rays of high power.
公开日期	2000-09-04
申请日期	1990-05-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44639]
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	中西 千登勢,瀧口 治久,工藤 裕章,等. 半導体レーザ素子とその製造方法. JP3084042B2. 2000-06-30.

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