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	光集積素子の製造方法
	水戸 郁夫; 村田 茂
	1996-07-25
著作权人	日本電気株式会社
专利号	JP2542570B2
国家	日本
文献子类	授权发明
其他题名	光集積素子の製造方法
英文摘要	PURPOSE:To make a wafer surface flat and photocoupling between respective elements satisfactory by providing a multi-layer film containing an activation layer, a lightguide layer which is so formed as to have its one end surface butted to the end surface of the activation layer and a buried layer. CONSTITUTION:After an SiO2 film 10 is formed on a wafer surface, the SiO2 film 10 is partially removed by patterning and, further, a P-type InP layer 4 and an InGaAsP activation layer 3 under the film 10 are selectively removed by a mixed etchant of H2SO4, H2I2 and H2O. Then an InGaAsP lightguide layer 5 and a non-doped InP layer 6 are laminated by liquid phase epitaxial growth. After the SiO2 film 10 is removed by a hydrofluoric acid etchant, a P-type InP buried layer 7 is formed over the whole surface of the wafer by liquid phase epitaxial growth. With this constitution, even if some unevenness exists on the surface, the flatness of the surface can be improved significantly by laminating the P-type InP buried layer 7 over the whole top surface.
公开日期	1996-10-09
申请日期	1985-05-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44578]
专题	半导体激光器专利数据库
作者单位	日本電気株式会社
推荐引用方式 GB/T 7714	水戸 郁夫,村田 茂. 光集積素子の製造方法. JP2542570B2. 1996-07-25.

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