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	Horizontal reactor for compound semiconductor growth
	SHIN, HYUN KEEL
	2001-04-10
著作权人	HANVAC CORPORATION
专利号	US6214116
国家	美国
文献子类	授权发明
其他题名	Horizontal reactor for compound semiconductor growth
英文摘要	Described is a horizontal reactor for processing GaN based semiconductors which achieves high quality epitaxial growth because no dust is produced through use of a ferrofluidic power transmission or gas flow to rotate its susceptor, elements from thermal decomposition of ammonia gas are provided separately at high temperatures at a position proximate the substrate so that premature reaction between ammonia ions and the reactant gases is avoided, and the reactor is constructed to suppress thermal convection attributed to heat from the susceptor which otherwise hinders smooth epitaxial growth.
公开日期	2001-04-10
申请日期	1999-01-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44470]
专题	半导体激光器专利数据库
作者单位	HANVAC CORPORATION
推荐引用方式 GB/T 7714	SHIN, HYUN KEEL. Horizontal reactor for compound semiconductor growth. US6214116. 2001-04-10.

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