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	Group III nitride compound semiconductor laser diodes
	NAGAI, SEIJI; YAMASAKI, SHIRO; KOIKE, MASAYOSHI; TOMITA, KAZUYOSHI; KACHI, TETSU; AKASAKI, ISAMU; AMANO, HIROSHI
	1999-03-30
著作权人	JAPAN SCIENCE AND TECHNOLOGY CORPORATION
专利号	US5889806
国家	美国
文献子类	授权发明
其他题名	Group III nitride compound semiconductor laser diodes
英文摘要	A laser diode using Group III nitride compound semiconductor consists of In0.2Ga0.8N/GaN SQW active layer 5, a pair of GaN guide layers 41 and 62, sandwiching the active layer with wider forbidden band than the active layer, and a pair of Al0.08Ga0.92N cladding layer 4 and 71, sandwiching a pair of the guide layers, and the LD confines carriers and light separately. Al0.15Ga0.75N stopper layers 41 and 62 with wider forbidden band than the guide layers are formed in some portion of each of the guide layers 41 and 62 in parallel to the active layer. As a result, carriers are confined in the active layer and the laser output of the LD is improved.
公开日期	1999-03-30
申请日期	1997-08-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44441]
专题	半导体激光器专利数据库
作者单位	JAPAN SCIENCE AND TECHNOLOGY CORPORATION
推荐引用方式 GB/T 7714	NAGAI, SEIJI,YAMASAKI, SHIRO,KOIKE, MASAYOSHI,et al. Group III nitride compound semiconductor laser diodes. US5889806. 1999-03-30.

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