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	Group III nitride compound semiconductor laser diode and method for producing same
	KATO, HISAKI; KOIDE, NORIKATSU; KOIKE, MASAYOSHI; AKASAKI, ISAMU; AMANO, HIROSHI
	1997-02-18
著作权人	WHEATON INC.
专利号	US5604763
国家	美国
文献子类	授权发明
其他题名	Group III nitride compound semiconductor laser diode and method for producing same
英文摘要	An improved laser diode is made of a gallium nitride compound semiconductor ((AlxGa1-x)yIn1-yN; 0 (c axis) of the sapphire substrate. The intermediate zinc oxide (ZnO) layer is selectively removed by wet etching with a ZnO-selective liquid etchant so as to form gaps between the sapphire substrate and the bottom-most sub-layer of the semiconductor laser element layer. The semiconductor laser element layer is cleaved with the aid of the gaps, and the resulting planes of cleavage are used as the mirror surfaces of the laser cavity.
公开日期	1997-02-18
申请日期	1995-04-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44407]
专题	半导体激光器专利数据库
作者单位	WHEATON INC.
推荐引用方式 GB/T 7714	KATO, HISAKI,KOIDE, NORIKATSU,KOIKE, MASAYOSHI,et al. Group III nitride compound semiconductor laser diode and method for producing same. US5604763. 1997-02-18.

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