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	Gallium nitride based compound semiconductor light-emitting device
	NIDO, MASAAKI; KURAMOTO, MASARU; YAMAGUCHI, ATSUSHI
著作权人	SAMSUNG ELECTRONICS CO., LTD.
专利号	US20030052316A1
国家	美国
文献子类	发明申请
其他题名	Gallium nitride based compound semiconductor light-emitting device
英文摘要	A light-emitting semiconductor device includes an active layer interposed between first-side and second-side cladding layer, and at least one of first-side and second-side optical guide layers. The following four equations are satisfied: 0.15<=h; |x-y|<=0.02; 0.02<=x<=0.06; and 0.34x-0.49<=d1+2h, where "h" is a total thickness of the first-side and second-side optical guide layers; "d1" is a thickness of the first-side cladding layer; "x" is a first Al-index of a first AlGaN bulk crystal which has a first refractive index equal to a first averaged refractive index of the first-side cladding layer; and "y" represents a second Al-index of a second AlGaN bulk crystal which has a second refractive index equal to a second averaged refractive index of the second-side cladding layer.
公开日期	2003-03-20
申请日期	2002-09-09
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/43731]
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRONICS CO., LTD.
推荐引用方式 GB/T 7714	NIDO, MASAAKI,KURAMOTO, MASARU,YAMAGUCHI, ATSUSHI. Gallium nitride based compound semiconductor light-emitting device. US20030052316A1.

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