| Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates | |
| D'EVELYN, MARK PHILIP; CAO, XIAN-AN; ZHANG, ANPING; LEBOEUF, STEVEN FRANCIS; HONG, HUICONG; PARK, DONG-SIL; NARANG, KRISTI JEAN | |
| 著作权人 | SORAA INC. |
| 专利号 | US20050087753A1 |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
| 英文摘要 | In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106′). Said growing includes applying a temporally varying thermal gradient (100, 100′, 102, 102′) between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106′), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180). |
| 公开日期 | 2005-04-28 |
| 申请日期 | 2003-10-24 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43471]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SORAA INC. |
| 推荐引用方式 GB/T 7714 | D'EVELYN, MARK PHILIP,CAO, XIAN-AN,ZHANG, ANPING,et al. Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates. US20050087753A1. |
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