| Laser diode graded index layer doping | |
| STOLTZ, RICHARD A.; BULLINGTON, JEFF A. | |
| 著作权人 | INFINITE PHOTONICS, INC. |
| 专利号 | US20020192850A1 |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser diode graded index layer doping |
| 英文摘要 | These laser diode chips generate light parallel to the top surface and utilize gratings that diffract light out top and/or bottom surfaces. Thus they have both a long light generation region and a large output area, and can provide significantly higher power than prior art semiconductor-chip diodes. The chips utilize graded index (GRIN) layers to provide light containment in the core. Previously, such GRIN layers have not been doped. We have found that doping of a portion of the graded layers generally lowers resistance and increases efficiency of the semiconductor structure while retaining the light containment effectiveness of full-wavelength-height waveguide. Lowering resistance generally also lowers heat generation and thus increases reliability. |
| 公开日期 | 2002-12-19 |
| 申请日期 | 2002-05-16 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43434]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INFINITE PHOTONICS, INC. |
| 推荐引用方式 GB/T 7714 | STOLTZ, RICHARD A.,BULLINGTON, JEFF A.. Laser diode graded index layer doping. US20020192850A1. |
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