Semiconductor laser device and method for it's fabrication
ROSS, BERND
1971-05-18
著作权人BELL & HOWELL COMPANY
专利号US3579055
国家美国
文献子类授权发明
其他题名Semiconductor laser device and method for it's fabrication
英文摘要An integral semiconductor diode laser designed for increased heat-dissipation efficiency. A diode element is sandwiched between, and is integral with, layers of semiinsulating semiconductor material. Opposed cleaved surfaces are provided on the device cutting across the diode PN junction and defining a laser cavity through which the PN junction extends. In preparation, a layer of high conductivity semiconductor material is disposed integral with a layer of semiinsulating semiconductor material and the semiinsulating material is grooved to expose portions of the surface of the high conductivity material. Semiconductor material of one conductivity type is then deposited on the exposed high conductivity material, followed by the provision of semiconductor material of opposite conductivity type to form PN junctions within the grooves. The top surface is then lapped to provide coplanarity between the semiinsulating and diode element materials. Electrical contacts are then disposed on the top, coplanar surface and bottom, high conductivity surface.
公开日期1971-05-18
申请日期1968-08-05
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/43244]  
专题半导体激光器专利数据库
作者单位BELL & HOWELL COMPANY
推荐引用方式
GB/T 7714
ROSS, BERND. Semiconductor laser device and method for it's fabrication. US3579055. 1971-05-18.
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