GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

	GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications
	Li, Jie ; Guo, Hao ; Liu, Jun ; Tang, Jun ; Ni, Haiqiao ; Shi, Yunbo ; Xue, Chenyang ; Niu, Zhichuan ; Zhang, Wendong ; Li, Mifeng ; Yu, Ying
刊名	nanoscale research letters
	2013
卷号	8 页码:218
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2013-08-27
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24285]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Li, Jie,Guo, Hao,Liu, Jun,et al. GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications[J]. nanoscale research letters,2013,8:218.
APA	Li, Jie.,Guo, Hao.,Liu, Jun.,Tang, Jun.,Ni, Haiqiao.,...&Yu, Ying.(2013).GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications.nanoscale research letters,8,218.
MLA	Li, Jie,et al."GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications".nanoscale research letters 8(2013):218.