Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well

	Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well
	Li, Hongjian ; Li, Panpan ; Kang, Junjie ; Li, Zhi ; Zhang, Yiyun ; Li, Zhicong ; Li, Jing ; Yi, Xiaoyan ; Li, Jinmin ; Wang, Guohong
刊名	applied physics express
	2013
卷号	6 期号:5 页码:052102
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2013-08-27
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24277]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Li, Hongjian,Li, Panpan,Kang, Junjie,et al. Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well[J]. applied physics express,2013,6(5):052102.
APA	Li, Hongjian.,Li, Panpan.,Kang, Junjie.,Li, Zhi.,Zhang, Yiyun.,...&Wang, Guohong.(2013).Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well.applied physics express,6(5),052102.
MLA	Li, Hongjian,et al."Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well".applied physics express 6.5(2013):052102.