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	Electronic transport properties in doped C60 molecular devices
	Zhang, Xiao-Jiao; Long, Meng-Qiu; Chen, Ke-Qiu; Shuai, Z.; Wan, Qing; Zou, B.S.; Zhang, Yan
刊名	Applied Physics Letters
	2009
卷号	Vol.94 No.7
关键词	density functional theory doping profiles fullerene compounds fullerene devices Green's function methods negative resistance
ISSN号	0003-6951
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6689773
专题	湖南大学
作者单位	1.Department of Applied Physics, Hunan University, Ministry of Education, Changsha 410082, China 2.Department of Chemistry, Tsinghua University, Beijing 100084, China 3.Department of Physics, Capital Normal University, Beijing 100037, China
推荐引用方式 GB/T 7714	Zhang, Xiao-Jiao,Long, Meng-Qiu,Chen, Ke-Qiu,et al. Electronic transport properties in doped C60 molecular devices[J]. Applied Physics Letters,2009,Vol.94 No.7.
APA	Zhang, Xiao-Jiao.,Long, Meng-Qiu.,Chen, Ke-Qiu.,Shuai, Z..,Wan, Qing.,...&Zhang, Yan.(2009).Electronic transport properties in doped C60 molecular devices.Applied Physics Letters,Vol.94 No.7.
MLA	Zhang, Xiao-Jiao,et al."Electronic transport properties in doped C60 molecular devices".Applied Physics Letters Vol.94 No.7(2009).

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