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	Synthesis of GaN nanorods through ammoniating Ga2O3/BN thin films deposited by RF magnetron sputtering
	Wu, Yuxin[1]; Xue, Chengshan[1]; Zhuang, Huizhao[1]; Tian, Deheng[1]; Liu, Yi'an[1]; He, Jianting[1]; Sun, Lili[1]; Wang, Fuxue[1]; Ai, Yujie[1]; Cao, Yuping[1]
	2006
卷号	292期号:2页码:294-297
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6604279
专题	山东师范大学
作者单位	[1] Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
推荐引用方式 GB/T 7714	Wu, Yuxin[1],Xue, Chengshan[1],Zhuang, Huizhao[1],et al. Synthesis of GaN nanorods through ammoniating Ga2O3/BN thin films deposited by RF magnetron sputtering[J],2006,292(2):294-297.
APA	Wu, Yuxin[1].,Xue, Chengshan[1].,Zhuang, Huizhao[1].,Tian, Deheng[1].,Liu, Yi'an[1].,...&Cao, Yuping[1].(2006).Synthesis of GaN nanorods through ammoniating Ga2O3/BN thin films deposited by RF magnetron sputtering.,292(2),294-297.
MLA	Wu, Yuxin[1],et al."Synthesis of GaN nanorods through ammoniating Ga2O3/BN thin films deposited by RF magnetron sputtering".292.2(2006):294-297.

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