Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I | |
Pan JQ | |
2006 | |
会议名称 | conference on nanophotonic materials iii |
会议日期 | aug 13-14, 2006 |
会议地点 | san diego, ca |
关键词 | InP |
页码 | 6321: i3210-i3210 |
通讯作者 | feng, w, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. |
中文摘要 | the narrow stripe selective growth of the ingaalas bulk waveguides and ingaalas mqw waveguides was first investigated. flat and clear interfaces were obtained for the selectively grown ingaalas waveguides under optimized growth conditions. these selectively grown ingaalas waveguides were covered by specific inp layers, which can keep the waveguides from being oxidized during the fabrication of devices. pl peak wavelength shifts of 70 nm for the ingaalas bulk waveguides and 73 nm for the ingaalas mqw waveguides were obtained with a small mask stripe width varying from 0 to 40 gm, and were interpreted in considering both the migration effect from the masked region (mmr) and the lateral vapor diffusion effect (lvd). the quality of the selectively grown ingaalas mqw waveguides was confirmed by the pl peak intensity and the pl fwhm. using the narrow stripe selectively grown ingaalas mqw waveguides, then the buried heterostructure (bh) lasers were fabricated by a developed unselective regrowth method, instead of conventional selective regrowth. the ingaalas mqw bh lasers exhibit good performance characteristics, with a high internal differential quantum efficiency of about 85% and an internal loss of 6.7 cm(-1). |
英文摘要 | the narrow stripe selective growth of the ingaalas bulk waveguides and ingaalas mqw waveguides was first investigated. flat and clear interfaces were obtained for the selectively grown ingaalas waveguides under optimized growth conditions. these selectively grown ingaalas waveguides were covered by specific inp layers, which can keep the waveguides from being oxidized during the fabrication of devices. pl peak wavelength shifts of 70 nm for the ingaalas bulk waveguides and 73 nm for the ingaalas mqw waveguides were obtained with a small mask stripe width varying from 0 to 40 gm, and were interpreted in considering both the migration effect from the masked region (mmr) and the lateral vapor diffusion effect (lvd). the quality of the selectively grown ingaalas mqw waveguides was confirmed by the pl peak intensity and the pl fwhm. using the narrow stripe selectively grown ingaalas mqw waveguides, then the buried heterostructure (bh) lasers were fabricated by a developed unselective regrowth method, instead of conventional selective regrowth. the ingaalas mqw bh lasers exhibit good performance characteristics, with a high internal differential quantum efficiency of about 85% and an internal loss of 6.7 cm(-1).; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; spie.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
收录类别 | 其他 |
会议主办者 | spie. |
会议录 | nanophotonic materials iii丛书标题: proceedings of the society of photo-optical instrumentation engineers (spie) |
会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
学科主题 | 光电子学 |
语种 | 英语 |
ISSN号 | 0277-786x |
ISBN号 | 0-8194-6400-7 |
内容类型 | 会议论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/9966] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Pan JQ. Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I[C]. 见:conference on nanophotonic materials iii. san diego, ca. aug 13-14, 2006. |
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