A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication
	Huang BJ (Huang Beiju) ; Zhang X (Zhang Xu) ; Liu HJ (Liu Haijun) ; Liu JB (Liu, Jinbin) ; Dai XG (Dai Xiaoguang) ; Zhang Y (Zhang Yu) ; Chen HD (Chen Hongda)
	2007
会议名称	international workshop on electron devices and semiconductor technology
会议日期	jun 03-04, 2007
会议地点	beijing, peoples r china
关键词	complementary metal-oxide-semiconductor (CMOS)
页码	198-201
通讯作者	huang, bj, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china.
中文摘要	a monolithic silicon cmos optoelectronic integrated circuit (oeic) was designed and fabricated with standard 0.6 mu m cmos technology. this oeic circuit consisted of an integrated double photodiode detector (dpd) and a preamplifier. the dpd detector exhibited high bandwidth by screening the bulk-generated diffusion carriers and suppressing the slow diffusion tail effect. the preamplifier exploited the regulated cascode (rgc) configuration as the input stage of receiver, thus isolating the influence of photodiode capacitance and input parasitic capacitance on bandwidth. testing results showed that the bandwidth of oeic was 700mhz, indicating the bit rate of 1gb/s was achieved.
英文摘要	a monolithic silicon cmos optoelectronic integrated circuit (oeic) was designed and fabricated with standard 0.6 mu m cmos technology. this oeic circuit consisted of an integrated double photodiode detector (dpd) and a preamplifier. the dpd detector exhibited high bandwidth by screening the bulk-generated diffusion carriers and suppressing the slow diffusion tail effect. the preamplifier exploited the regulated cascode (rgc) configuration as the input stage of receiver, thus isolating the influence of photodiode capacitance and input parasitic capacitance on bandwidth. testing results showed that the bandwidth of oeic was 700mhz, indicating the bit rate of 1gb/s was achieved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; ieee electron devices soc. tsinghua univ; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	其他
会议主办者	ieee electron devices soc. tsinghua univ
会议录	2007 international workshop on electron devices and semiconductor technology
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	光电子学
语种	英语
ISBN号	978-1-4244-1097-2
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9830]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Huang BJ ,Zhang X ,Liu HJ ,et al. A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication[C]. 见:international workshop on electron devices and semiconductor technology. beijing, peoples r china. jun 03-04, 2007.