SOI optical switch matrix integrated with spot size converter (SSC) and total internal reflection (TIR) mirrors

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	SOI optical switch matrix integrated with spot size converter (SSC) and total internal reflection (TIR) mirrors
	Yu JZ (Yu Jinzhong) ; Chen SW (Chen Shaowu) ; Li ZY (Li Zhiyong) ; Chen YY (Chen Yuanyuan) ; Li YT (Li Yuntao) ; Li YP (Li Yanping) ; Liu JW (Liu Jingwei) ; Yang D (Yang Di)
	2006
会议名称	3rd international conference on group iv photonics
会议日期	sep 13-15, 2006
会议地点	ottawa, canada
关键词	SOI
页码	119-121
通讯作者	yu, jz, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china.
中文摘要	soi (silicon on insulator) based photonic devices has attracted more and more attention in the recent years. integration of soi optical switch matrix with isolating grooves, total internal reflection (tir) mirrors and spot size converter (ssc) was studied. a folding re-arrangeable non-blocking 4x4 optical switch matrix and a blocking 16x16 matrix with tir mirrors and ssc were fabricated on soi wafer. the performaces, including extinction ratio and the crosstalk, are better than before. the insertion loss and the polarization dependent loss (pdl) at 1.55 mu m increase slightly with longer device length, more bend and intersecting waveguides. the insertion losses decrease 2 similar to 3 db when anti-reflection films are added in the ends of the devices. the rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.
英文摘要	soi (silicon on insulator) based photonic devices has attracted more and more attention in the recent years. integration of soi optical switch matrix with isolating grooves, total internal reflection (tir) mirrors and spot size converter (ssc) was studied. a folding re-arrangeable non-blocking 4x4 optical switch matrix and a blocking 16x16 matrix with tir mirrors and ssc were fabricated on soi wafer. the performaces, including extinction ratio and the crosstalk, are better than before. the insertion loss and the polarization dependent loss (pdl) at 1.55 mu m increase slightly with longer device length, more bend and intersecting waveguides. the insertion losses decrease 2 similar to 3 db when anti-reflection films are added in the ends of the devices. the rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; ieee.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	其他
会议主办者	ieee.
会议录	2006 3rd ieee international conference on group iv photonics
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	光电子学
语种	英语
ISBN号	978-1-4244-0095-9
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9778]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yu JZ ,Chen SW ,Li ZY ,et al. SOI optical switch matrix integrated with spot size converter (SSC) and total internal reflection (TIR) mirrors[C]. 见:3rd international conference on group iv photonics. ottawa, canada. sep 13-15, 2006.