Fabrication method of silicon nanostructures by anisotropic etching

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Fabrication method of silicon nanostructures by anisotropic etching
	Han, WH ; Yang, X ; Wang, Y ; Yang, FH ; Yu, JZ
	2008
会议名称	5th ieee international conference on group iv photonics
会议日期	sep 17-19, 2008
会议地点	sorrento, italy
页码	: 146-148
通讯作者	han, wh, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china.
中文摘要	a fabrication method of silicon nanostructures is presented. silicon nanowire, shift-line structure and islands have been successfully fabricated on soi wafer using e-beam lithography and anisotropic etching technique.
英文摘要	a fabrication method of silicon nanostructures is presented. silicon nanowire, shift-line structure and islands have been successfully fabricated on soi wafer using e-beam lithography and anisotropic etching technique.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t07:08:19z (gmt). no. of bitstreams: 1 310.pdf: 1340195 bytes, checksum: 6daacbb898a7d0d8b5728065b44848e5 (md5) previous issue date: 2008; ieee.; informat soc technol.; helios.; [han, weihua; yang, xiang; wang, ying; yang, fuhua; yu, jinzhong] chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	ieee.; informat soc technol.; helios.
会议录	2008 5th ieee international conference on group iv photonics
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	光电子学
语种	英语
ISBN号	978-1-4244-1769-8
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/8346]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han, WH,Yang, X,Wang, Y,et al. Fabrication method of silicon nanostructures by anisotropic etching[C]. 见:5th ieee international conference on group iv photonics. sorrento, italy. sep 17-19, 2008.