Si based quantum cascade structure: from energy band structures design to materials growth | |
Yu, JZ ; Han, GQ | |
2009 | |
会议名称 | 3rd sino-german symposium on silicon age - silicon for microelectronics, photonics and photovoltacis |
会议日期 | jun 09-14, 2008 |
会议地点 | hangzhou, peoples r china |
页码 | vol 6,no 3,6 (3): 704-706 |
通讯作者 | yu, jz, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. |
中文摘要 | in this paper, we propose an n-type vertical transition bound-to-continuum ge/sige quantum cascade structure utilizing electronic quantum wells in the l and gamma valleys of the ge layers. the optical transition levels are located in the quantum wells in the l valley. the gamma-l intervalley scattering is used to depopulate the lower level and inject the electrons into the upper level. we also show that high quality si1-ygey pseudosubstrate is obtained by thermal annealing of si1-xgex/ge/si structure. (c) 2009 wiley-vch verlag gmbh & co. kgaa, weinheim |
英文摘要 | in this paper, we propose an n-type vertical transition bound-to-continuum ge/sige quantum cascade structure utilizing electronic quantum wells in the l and gamma valleys of the ge layers. the optical transition levels are located in the quantum wells in the l valley. the gamma-l intervalley scattering is used to depopulate the lower level and inject the electrons into the upper level. we also show that high quality si1-ygey pseudosubstrate is obtained by thermal annealing of si1-xgex/ge/si structure. (c) 2009 wiley-vch verlag gmbh & co. kgaa, weinheim; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t07:08:17z (gmt). no. of bitstreams: 1 294.pdf: 469563 bytes, checksum: 06679cdda8710cc67d7caa1bc95ecd4c (md5) previous issue date: 2009; sino-german sci ctr.; [yu, jinzhong; han, genquan] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
收录类别 | CPCI-S |
会议主办者 | sino-german sci ctr. |
会议录 | physica status solidi c - current topics in solid state physics |
会议录出版者 | wiley-v c h verlag gmbh ; pappelallee 3, w-69469 weinheim, germany |
会议录出版地 | pappelallee 3, w-69469 weinheim, germany |
学科主题 | 光电子学 |
语种 | 英语 |
ISSN号 | 1610-1634 |
内容类型 | 会议论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/8314] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Yu, JZ,Han, GQ. Si based quantum cascade structure: from energy band structures design to materials growth[C]. 见:3rd sino-german symposium on silicon age - silicon for microelectronics, photonics and photovoltacis. hangzhou, peoples r china. jun 09-14, 2008. |
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