Annealing behaviors of photoluminescence from SiOx : H

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	Annealing behaviors of photoluminescence from SiOx : H
	Ma ZX ; Liao XB ; He J ; Cheng WC ; Yue GZ ; Wang YQ ; Kong GL
刊名	journal of applied physics
	1998
卷号	83 期号:12 页码:7934-7939
关键词	POROUS SILICON PHOTOLUMINESCENCE VISIBLE-LIGHT EMISSION RAMAN-SCATTERING GLOW-DISCHARGE LUMINESCENCE CONFINEMENT SPECTRA ORIGIN FILMS BONDS
ISSN号	0021-8979
通讯作者	ma zx,chinese acad sci,ctr condensed matter phys,inst semicond,state lab surface phys,pob 912,beijing 10083,peoples r china.
中文摘要	the strong photoluminescence (pl) of siox:h prepared by plasma enhanced chemical vapor deposition has been systematically studied in conjunction with infrared and micro-raman spectra. we have found that each pl spectrum is comprised of two gaussian components, a main band and a shoulder. the main band might originate from amorphous silicon clusters embedded in die siox network, and its redshift with annealing temperature is due to expansion of the silicon clusters. the shoulder remains at about 835 nm in spite of the annealing temperature and possibly comes from luminescent defect centers. the enhanced pl spectra after 1170 degrees c annealing are attributed to the quantum confinement effects of nanocrystalline silicon embedded in the sio2 matrix. (c) 1998 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13142]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ma ZX,Liao XB,He J,et al. Annealing behaviors of photoluminescence from SiOx : H[J]. journal of applied physics,1998,83(12):7934-7939.
APA	Ma ZX.,Liao XB.,He J.,Cheng WC.,Yue GZ.,...&Kong GL.(1998).Annealing behaviors of photoluminescence from SiOx : H.journal of applied physics,83(12),7934-7939.
MLA	Ma ZX,et al."Annealing behaviors of photoluminescence from SiOx : H".journal of applied physics 83.12(1998):7934-7939.