Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters
	Liu JP ; Kong MY ; Si JJ ; Huang DD ; Li JP ; Sun DZ
刊名	journal of physics d-applied physics
	1998
卷号	31 期号:23 页码:l85-l87
关键词	DISORDERED SUPERLATTICES LAYERS
ISSN号	0022-3727
通讯作者	liu jp,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	photoluminescence properties of sige/si single wells with fluctuating structural parameters are studied. four sige/si single wells have been grown on si(001) at 750 degrees c by disilane and solid ge molecular beam epitaxy with varied disilane cracking-temperatures. intense np and to-phonon replicas are detected up to 70 k in the photoluminescence spectra and the activation energy of the thermal quenching of the photoluminescence is 28 +/- 4 mev. the high growth temperature and purposeful introduction of fluctuation of structural parameters may be responsible for the improvement of the thermal quenching property.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13036]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu JP,Kong MY,Si JJ,et al. Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters[J]. journal of physics d-applied physics,1998,31(23):l85-l87.
APA	Liu JP,Kong MY,Si JJ,Huang DD,Li JP,&Sun DZ.(1998).Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters.journal of physics d-applied physics,31(23),l85-l87.
MLA	Liu JP,et al."Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters".journal of physics d-applied physics 31.23(1998):l85-l87.