A new interface anisotropic potential of zinc-blende semiconductor interface induced by lattice mismatch

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	A new interface anisotropic potential of zinc-blende semiconductor interface induced by lattice mismatch
	Chen YH ; Wang ZG ; Yang ZY
刊名	chinese physics letters
	1999
卷号	16 期号:1 页码:56-58
关键词	QUANTUM-WELLS OPTICAL ANISOTROPY ASYMMETRY STRAIN
ISSN号	0256-307x
通讯作者	chen yh,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	a new interface anisotropic potential, which is proportional to the lattice mismatch of interfaces and has no fitting parameter, has been deduced for (001) zinc-blende semiconductor interfaces. the comparison with other interface models is given for gaas/alas and gaas/inas interfaces. the strong influence of the interface anisotropic potential on the inplane optical anisotropy of gaas/algaas low dimensional structures is demonstrated theoretically within the envelope function approximation.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12972]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen YH,Wang ZG,Yang ZY. A new interface anisotropic potential of zinc-blende semiconductor interface induced by lattice mismatch[J]. chinese physics letters,1999,16(1):56-58.
APA	Chen YH,Wang ZG,&Yang ZY.(1999).A new interface anisotropic potential of zinc-blende semiconductor interface induced by lattice mismatch.chinese physics letters,16(1),56-58.
MLA	Chen YH,et al."A new interface anisotropic potential of zinc-blende semiconductor interface induced by lattice mismatch".chinese physics letters 16.1(1999):56-58.