Intraband absorption in the 8-12 mu m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

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	Intraband absorption in the 8-12 mu m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice
	Zhuang QD ; Li JM ; Li HX ; Zeng YP ; Pan L ; Chen YH ; Kong MY ; Lin LY
刊名	applied physics letters
	1998
卷号	73 期号:25 页码:3706-3708
关键词	X-RAY-DIFFRACTION INFRARED-ABSORPTION SELF-ORGANIZATION ISLANDS WELL SPECTROSCOPY TRANSITIONS LASERS INP
ISSN号	0003-6951
通讯作者	zhuang qd,chinese acad sci,inst semicond,novel mat ctr,pob 912,beijing 100083,peoples r china.
中文摘要	normal-incident infrared absorption in the 8-12-mu m-atmospheric spectral window in the ingaas/gaas quantum-dot superlattice is observed. using cross-sectional transmission electron microscopy, we find that the ingaas quantum dots are perfectly vertically aligned in the growth direction (100). under the normal incident radiation, a distinct absorption peaked at 9.9 mu m is observed. this work indicates the potential of this quantum-dot superlattice structure for use as normal-incident infrared imaging focal arrays application without fabricating grating structures. (c) 1998 american institute of physics. [s0003-6951(98)01151-6].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12970]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhuang QD,Li JM,Li HX,et al. Intraband absorption in the 8-12 mu m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice[J]. applied physics letters,1998,73(25):3706-3708.
APA	Zhuang QD.,Li JM.,Li HX.,Zeng YP.,Pan L.,...&Lin LY.(1998).Intraband absorption in the 8-12 mu m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice.applied physics letters,73(25),3706-3708.
MLA	Zhuang QD,et al."Intraband absorption in the 8-12 mu m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice".applied physics letters 73.25(1998):3706-3708.