Hole capture barrier of self-organized InAs quantum dots

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Hole capture barrier of self-organized InAs quantum dots
	Wang HL ; Zhu HJ ; Ning D ; Chen F ; Feng SL
刊名	journal of infrared and millimeter waves
	1999
卷号	18 期号:5 页码:397-401
关键词	DLTS self-organized quantum dots InAs/GaAs ELECTRON SPECTROSCOPY ENERGY-LEVELS
ISSN号	1001-9014
通讯作者	wang hl,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	deep level transient spectroscopy (dlts) technique was successfully applied to characterize the electric properties of p type self-organized inas quantum dots. the ground state energy and capture barrier energy of hole of quantum dots were measured for the first time. the energy of ground state of 2.5ml inas quantum dots with respect to the valence band of bulk gaas was obtained being about 0.09ev, and there was a barrier associated to the change of charge state of quantum dots. the capture barrier energy of such dots for hole was about 0.26ev. the work is very meaningful for further understanding the intrinsic properties of quantum dots.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12782]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang HL,Zhu HJ,Ning D,et al. Hole capture barrier of self-organized InAs quantum dots[J]. journal of infrared and millimeter waves,1999,18(5):397-401.
APA	Wang HL,Zhu HJ,Ning D,Chen F,&Feng SL.(1999).Hole capture barrier of self-organized InAs quantum dots.journal of infrared and millimeter waves,18(5),397-401.
MLA	Wang HL,et al."Hole capture barrier of self-organized InAs quantum dots".journal of infrared and millimeter waves 18.5(1999):397-401.