Investigation of absorption of nanocrystalline silicon

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	Investigation of absorption of nanocrystalline silicon
	Ma ZX ; Liao XB ; Kong GL ; Chu JH
刊名	chinese physics letters
	1999
卷号	16 期号:11 页码:833-835
关键词	RAMAN-SPECTRA QUANTUM
ISSN号	0256-307x
通讯作者	ma zx,chinese acad sci,inst semicond,state key lab surface phys,beijing 100083,peoples r china.
中文摘要	nanocrystalline silicon embedded sio2 matrix is formed by annealing the sio2 films fabricated by plasma enhanced chemical vapor deposition technique. in conjunction with the micro-ramam spectra, the absorption spectra of the films have been investigated. the blue-shift of absorption edge with decreasing size of silicon crystallites is due to quantum confinement effect. it is found that nanocrystalline silicon is of an indirect band structure, and that the absorption presents an exponential dependance absorption coefficient on photon energy ii! the range of 2.0-3.0 ev, and a sub-band appears in the the range of 1.0-1.5 ev. we believe that the exponential absorption is due to the indirect band-to-band transition of electrons in silicon nanocrystallites, while the sub-band absorption is ascribed to transitions between the amorphous silicon states existing in the films.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12756]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ma ZX,Liao XB,Kong GL,et al. Investigation of absorption of nanocrystalline silicon[J]. chinese physics letters,1999,16(11):833-835.
APA	Ma ZX,Liao XB,Kong GL,&Chu JH.(1999).Investigation of absorption of nanocrystalline silicon.chinese physics letters,16(11),833-835.
MLA	Ma ZX,et al."Investigation of absorption of nanocrystalline silicon".chinese physics letters 16.11(1999):833-835.