High-speed and high-power 1.3 mu m InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	High-speed and high-power 1.3 mu m InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions
	Zhang BJ ; Yi MB ; Song JF ; Gao DS ; Zhu NH ; Wu RH ; Wang W
刊名	japanese journal of applied physics part 1-regular papers short notes & review papers
	1999
卷号	38 期号:12a 页码:6729-6731
关键词	semiconductor laser heterostructure proton bombardment modulation bandwidth MOCVD CURRENT BLOCKING LAYERS INNER-STRIPE LASERS
ISSN号	0021-4922
通讯作者	zhang bj,chinese acad sci,natl res ctr optoelect technol,inst semicond,pob 912,beijing 100083,peoples r china.
中文摘要	high-speed and high-power ingaasp/lnp selective proton-bombarded buried crescent (spb-bc) lasers with optical field attenuation regions were reported. the defect of proton bombardment can not affect the lifetime of the spb-bc laser because the optical field attenuation region obstructs the growth and propagation of defects. a cw light output over 115 mw was achieved at room temperature using a 500 mu m long cavity spb-bc laser. the 3 db bandwidth was 8.5 ghz, and the lifetime was about 8.5 x 10(5) h. the capacitance of four kinds of current blocking structures was first measured in our experiment, and the results shown that the capacitance of proton-bombarded pnpn structure was not only less than that of pnpn current blocking structure, but also less than that of semi-insulating fe-inp structure.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12732]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang BJ,Yi MB,Song JF,et al. High-speed and high-power 1.3 mu m InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,1999,38(12a):6729-6731.
APA	Zhang BJ.,Yi MB.,Song JF.,Gao DS.,Zhu NH.,...&Wang W.(1999).High-speed and high-power 1.3 mu m InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions.japanese journal of applied physics part 1-regular papers short notes & review papers,38(12a),6729-6731.
MLA	Zhang BJ,et al."High-speed and high-power 1.3 mu m InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions".japanese journal of applied physics part 1-regular papers short notes & review papers 38.12a(1999):6729-6731.