Comparison of Cu thin films deposited on Si substrates with different surfaces and temperatures

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	Comparison of Cu thin films deposited on Si substrates with different surfaces and temperatures
	Zhang J(张俊); Liu C(刘崇); Fan J(樊菁)
刊名	APPLIED SURFACE SCIENCE
	2013-07-01
通讯作者邮箱	zhangjun04@imech.ac.cn
卷号	276 页码:417-423
关键词	Copper thin film Deposition and growth Molecular dynamics Crystalline structure and orientation
ISSN号	0169-4332
通讯作者	Zhang, J (reprint author), Chinese Acad Sci, Inst Mech, State Key Lab High Temp Gas Dynam, Beijing 100190, Peoples R China.
产权排序	[Zhang, Jun; Liu, Chong; Fan, Jing] Chinese Acad Sci, Inst Mech, State Key Lab High Temp Gas Dynam, Beijing 100190, Peoples R China
中文摘要	Deposition and growth of Cu thin films on Si(1 0 0), Si(1 1 0) and Si(1 1 1) substrates are studied using molecular dynamics method. The Cu/Si interface diffusion, surface roughness, crystalline structure and growth orientation of Cu thin films are investigated in detail. The effects of substrate surface and temperature are analyzed. Our simulation results show that the number of Cu atoms getting across the substrate surface for Si(1 1 1) substrate is the largest, and the number for Si(1 1 0) substrate is the smallest. This is caused by the difference of the linear atomic densities and planar atomic densities of Si crystal in different directions and planes. The growth of Cu thin films deposited on Si(1 0 0) substrate is (1 0 0) oriented at low temperature, and gradually changes to be (1 1 1) oriented as the increasing of substrate temperature. On the other side, the growth of Cu thin films deposited on Si(1 1 0) and Si(1 1 1) substrates is always (1 1 1) oriented. Increasing substrate temperature could effectively reduce surface roughness, increase the number of Cu atoms with face-centered cubic (fcc) structure, but meanwhile increase the Cu/Si interface diffusion. Under the same substrate temperature condition, the number of Cu atoms with fcc structure in thin films deposited on Si(1 1 0) substrate is larger than that deposited on Si(1 1 1) substrate.
学科主题	非平衡流
分类号	一类
收录类别	SCI ; EI
资助信息	National Natural Science Foundation of China [11002147, 10921062]
原文出处	http://dx.doi.org/10.1016/j.apsusc.2013.03.109
语种	英语
WOS记录号	WOS:000318979800060
公开日期	2013-06-27
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/47305]
专题	力学研究所_高温气体动力学国家重点实验室
推荐引用方式 GB/T 7714	Zhang J,Liu C,Fan J. Comparison of Cu thin films deposited on Si substrates with different surfaces and temperatures[J]. APPLIED SURFACE SCIENCE,2013,276:417-423.
APA	张俊,刘崇,&樊菁.(2013).Comparison of Cu thin films deposited on Si substrates with different surfaces and temperatures.APPLIED SURFACE SCIENCE,276,417-423.
MLA	张俊,et al."Comparison of Cu thin films deposited on Si substrates with different surfaces and temperatures".APPLIED SURFACE SCIENCE 276(2013):417-423.