Photoluminescence of erbium-doped hydrogenated amorphous SiOx(0 < x < 2)

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	Photoluminescence of erbium-doped hydrogenated amorphous SiOx(0 < x < 2)
	Liang JJ ; Wang YQ ; Chen WD ; Wang ZG ; Chang Y
刊名	acta physica sinica
	2000
卷号	49 期号:7 页码:1386-1389
关键词	Er luminescence oxygen content CRYSTALLINE SI SILICON ELECTROLUMINESCENCE LUMINESCENCE ER
ISSN号	1000-3290
通讯作者	liang jj,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要	hydrogenated amorphous siox films are fabricated via plasma enhanced chemical vapor deposition technique. after erbium implantation and rapid thermal annealing, photoluminescence (pl) are measured at 77 k and room temperature (rt), respectively. we observed the strong pl at 1.54 mu m at rt. the 1.54 mu m pl intensity changes with the variation of concentration of oxygen. the most intense pl at 77 k in a-siox:h (er) corresponds to o/si = 1.0 and at rt to o/si = 1.76. based on our results, we propose that er ions contributed to pl come from o-rich region in the film. er ions in si-rich region have no relation with fl. temperature dependence of the intensity of the 1.54 mu m line of the er3+ transition displays a very weak temperature quenching in er-doped hydrogenated amorphous si. the pl intensity at 250 k is a little more one half of that at 15 k.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12516]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liang JJ,Wang YQ,Chen WD,et al. Photoluminescence of erbium-doped hydrogenated amorphous SiOx(0 < x < 2)[J]. acta physica sinica,2000,49(7):1386-1389.
APA	Liang JJ,Wang YQ,Chen WD,Wang ZG,&Chang Y.(2000).Photoluminescence of erbium-doped hydrogenated amorphous SiOx(0 < x < 2).acta physica sinica,49(7),1386-1389.
MLA	Liang JJ,et al."Photoluminescence of erbium-doped hydrogenated amorphous SiOx(0 < x < 2)".acta physica sinica 49.7(2000):1386-1389.