Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film

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	Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film
	Xu XL ; Hou YB ; Xu Z ; Wang XW ; Xu XR
刊名	japanese journal of applied physics part 1-regular papers short notes & review papers
	2000
卷号	39 期号:4a 页码:1769-1770
关键词	thin film electroluminescence photoluminescence (Gd2O3-Ga2O3): Ce SRS-CU PHOSPHORS DEVICES GROWTH
ISSN号	0021-4922
通讯作者	xu xl,no jiaotong univ,inst optoelect technol,beijing 100044,peoples r china.
中文摘要	a novel electroluminescence oxide phosphor (gd2o3-ga2o3):ce has been prepared by electron beam evaporation. the emission peaks of photoluminescence lie at 390nm and a shoulder at 440nm. however, the electroluminescence of the (gd2o3-ga2o3):ce thin film have four emission peaks at 358nm, 390nm, 439nm and 510nm, respectively. the optical absorption of (gd2o3-ga2o3):ce thin film and the photoluminescence of composite materials with various ratios of ga2o3/(gd2o3+ga2o3) have also been described to investigate the origin of emission of photoluminescence and electroluminescence.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12478]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu XL,Hou YB,Xu Z,et al. Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,2000,39(4a):1769-1770.
APA	Xu XL,Hou YB,Xu Z,Wang XW,&Xu XR.(2000).Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film.japanese journal of applied physics part 1-regular papers short notes & review papers,39(4a),1769-1770.
MLA	Xu XL,et al."Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film".japanese journal of applied physics part 1-regular papers short notes & review papers 39.4a(2000):1769-1770.