X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices
Xu SJ ; Wang H ; Li Q ; Xie MH ; Wang XC ; Fan WJ ; Feng SL
刊名applied physics letters
2000
卷号77期号:14页码:2130-2132
关键词ELECTRONIC-STRUCTURE GAAS GROWTH LUMINESCENCE MULTILAYERS ISLANDS LASER
ISSN号0003-6951
通讯作者xu sj,univ hong kong,dept phys,pokfulam rd,hong kong,hong kong,peoples r china.
中文摘要we report on the characterization of thermally induced interdiffusion in inas/gaas quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. the dynamical theory is employed to simulate the measured x-ray diffraction rocking curves of the inas/gaas quantum-dot superlattices annealed at different temperatures. excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. it is found that the significant in-ga intermixing occurs even in the as-grown inas/gaas quantum dots. the diffusion coefficients at different temperatures are estimated. (c) 2000 american institute of physics. [s0003-6951(00)02440-2].
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/12440]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Xu SJ,Wang H,Li Q,et al. X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices[J]. applied physics letters,2000,77(14):2130-2132.
APA Xu SJ.,Wang H.,Li Q.,Xie MH.,Wang XC.,...&Feng SL.(2000).X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices.applied physics letters,77(14),2130-2132.
MLA Xu SJ,et al."X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices".applied physics letters 77.14(2000):2130-2132.
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