X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices | |
Xu SJ ; Wang H ; Li Q ; Xie MH ; Wang XC ; Fan WJ ; Feng SL | |
刊名 | applied physics letters
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2000 | |
卷号 | 77期号:14页码:2130-2132 |
关键词 | ELECTRONIC-STRUCTURE GAAS GROWTH LUMINESCENCE MULTILAYERS ISLANDS LASER |
ISSN号 | 0003-6951 |
通讯作者 | xu sj,univ hong kong,dept phys,pokfulam rd,hong kong,hong kong,peoples r china. |
中文摘要 | we report on the characterization of thermally induced interdiffusion in inas/gaas quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. the dynamical theory is employed to simulate the measured x-ray diffraction rocking curves of the inas/gaas quantum-dot superlattices annealed at different temperatures. excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. it is found that the significant in-ga intermixing occurs even in the as-grown inas/gaas quantum dots. the diffusion coefficients at different temperatures are estimated. (c) 2000 american institute of physics. [s0003-6951(00)02440-2]. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/12440] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Xu SJ,Wang H,Li Q,et al. X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices[J]. applied physics letters,2000,77(14):2130-2132. |
APA | Xu SJ.,Wang H.,Li Q.,Xie MH.,Wang XC.,...&Feng SL.(2000).X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices.applied physics letters,77(14),2130-2132. |
MLA | Xu SJ,et al."X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices".applied physics letters 77.14(2000):2130-2132. |
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