Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate

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	Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate
	Ye XL; Xu B
刊名	journal of crystal growth
	2000
卷号	219 期号:1-2 页码:17-21
关键词	quantum dots molecular beam epitaxy high index MOLECULAR-BEAM EPITAXY STRAINED ISLANDS GAAS ORGANIZATION INP(001) LASERS INGAAS LAYER
ISSN号	0022-0248
通讯作者	li yf,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	self-assembled inas quantum dots (qds) in inalas grown on (001) and (311)b inp substrates by molecular beam epitaxy (mbe) have been comparatively investigated. a correlated study of atomic force microscopy (afm) and photoluminescence (pl) disclosed that inas qds grown on high-index inp substrates can lead to high density and uniformity. by introducing a lattice-matched inalgaas overlayer on inalas buffer, still more dense and uniform inas qds were obtained in comparison with inas qds formed with only inalas matrix. moreover, two-dimensional well-ordered inas dots with regular shape grown on (311)b inp substrates are reported for the first time. we explained this exceptional phenomenon from strain energy combined with kinetics point of view. (c) 2000 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12424]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ye XL,Xu B. Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate[J]. journal of crystal growth,2000,219(1-2):17-21.
APA	Ye XL,&Xu B.(2000).Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate.journal of crystal growth,219(1-2),17-21.
MLA	Ye XL,et al."Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate".journal of crystal growth 219.1-2(2000):17-21.