Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots

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	Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots
	Xu B; Ye XL
刊名	journal of crystal growth
	2000
卷号	219 期号:3 页码:199-204
关键词	quantum dots InAs/GaAs MBE photoluminescence absorption OPTICAL-PROPERTIES PHOTOLUMINESCENCE SPECTROSCOPY INGAAS LASER
ISSN号	0022-0248
通讯作者	zhang yc,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	in this work we report the photoluminescence (pl) and interband absorption study of si-modulation-doped multilayer inas/gaas quantum dots grown by molecular beam epitaxy (mbe) on (100) oriented gaas substrates. low-temperature pl shows a distinctive double-peak feature. power-dependent pl and transmission electron microscopy (tem) confirm that they stem from the ground states emission of islands of bimodal size distribution. temperature-dependent pl study indicates that the family of small dots is ensemble effect dominated while the family of large dots is likely to be dominated by the intrinsic property of single quantum dots (qds). the temperature-dependent pl and interband absorption measurements are discussed in terms of thermalized redistribution of the carriers among groups of qds of different sizes in the ensemble. (c) 2000 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12400]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B,Ye XL. Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots[J]. journal of crystal growth,2000,219(3):199-204.
APA	Xu B,&Ye XL.(2000).Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots.journal of crystal growth,219(3),199-204.
MLA	Xu B,et al."Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots".journal of crystal growth 219.3(2000):199-204.