Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots | |
Li GH ; Chen Y ; Fung ZL ; Ding K ; Han HX ; Zhou W ; Wang ZG | |
刊名 | physica status solidi b-basic research |
2001 | |
卷号 | 223期号:1页码:157-162 |
关键词 | HYDROSTATIC-PRESSURE PHOTOLUMINESCENCE GAAS LUMINESCENCE GROWTH INSB GASB |
ISSN号 | 0370-1972 |
通讯作者 | li gh,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
中文摘要 | the photoluminescence (pl) of in0.55al0.45as/al0.5ga0.5as self-assembled quantum dots has been measured at 15 and 80 k under hydrostatic pressure. the lateral size of the dots ranges from 7 to 62 nm. the emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, indicating that these quantum dots have the normal type-i structure with lowest conduction band at the gamma -valley. however, the pl peak of dots with 7 nm diameter moves to lower energy with increasing pressure. it is a typical character for the x-related transition. then these small dots have a type-ii structure with the x-valley as the lowest conduction level. an envelope-function calculation confirms that the gamma -like exciton transition energy will rise above the x-like transition energy in the in0.55al0.45as/al0.5ga0.5as structure if the dot size is small enough. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/12294] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Li GH,Chen Y,Fung ZL,et al. Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots[J]. physica status solidi b-basic research,2001,223(1):157-162. |
APA | Li GH.,Chen Y.,Fung ZL.,Ding K.,Han HX.,...&Wang ZG.(2001).Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots.physica status solidi b-basic research,223(1),157-162. |
MLA | Li GH,et al."Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots".physica status solidi b-basic research 223.1(2001):157-162. |
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