Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures

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	Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures
	Niu ZC ; Wang XD ; Miao ZH ; Feng SL
刊名	journal of infrared and millimeter waves
	2001
卷号	20 期号:1 页码:20-24
关键词	InAs/GaAs self-organized quantum dots photoluminescence molecular beam epitaxy InGaAs capping layer 1.35 MU-M OPTICAL-PROPERTIES EMISSION LAYER
ISSN号	1001-9014
通讯作者	niu zc,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	optical properties of ingaas/gaas self-organized quantum dots (qds) structures covered by inxga1-x as capping layers with different in contents chi ranging from 0. 0 (i.e., gaas) to 0. 3 were investigated systematically by photoluminescence (pl) measurements. red-shift of the pl peak energies of the inas qds covered by inxga1-xas layers with narrower linewidth and less shifts of the pl emissions via variations of the measurement temperatures were observed compared with that covered by gaas layers. calculation and structural measurements confirm that the red-shift of the pl peaks are mainly due to strain reduction and suppression of the in/ga intermixing due to the inxga1-xas cover layer, leading to better size uniformity and thus narrowing the pl linewidth of the qds. 1. 3 mum wavelength emission with very narrow linewidth of only 19. 2 mev at room temperature was successfully obtained from the in0.5ga0.5as/gaas qds covered by the in0.2ga0.8as layer.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12282]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Niu ZC,Wang XD,Miao ZH,et al. Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures[J]. journal of infrared and millimeter waves,2001,20(1):20-24.
APA	Niu ZC,Wang XD,Miao ZH,&Feng SL.(2001).Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures.journal of infrared and millimeter waves,20(1),20-24.
MLA	Niu ZC,et al."Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures".journal of infrared and millimeter waves 20.1(2001):20-24.