The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering

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	The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering
	Liu FZ ; Zhu MF ; Liu T ; Li BC
刊名	acta physica sinica
	2001
卷号	50 期号:3 页码:532-535
关键词	SiO2(Eu) films XANES SPECTROSCOPY SILICON VALENCE GLASS ER3+
ISSN号	1000-3290
通讯作者	liu fz,univ sci & technol china,state key lab mat chem & applicat,dept phys,grad sch,beijing 100039,peoples r china.
中文摘要	eu ions doped sio2 thin films, sio2( eu), were prepared by co-sputtering of sio2 and eu2o3 and eu ion implantation into thermally grown sio2 films. the eu-l-3-edge x-ray absorption near edge structure (xanes) spectra of sio2(eu) films show a doublet absorption peak structure with energy difference of 7 ev, which indicates the conversion of eu3+ to eu2+ at high annealing temperature in n-2. the strong blue luminescence of sio2(eu) films prepared by ions implantation after films annealed above 1100 degreesc confirms the above argument.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12268]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu FZ,Zhu MF,Liu T,et al. The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering[J]. acta physica sinica,2001,50(3):532-535.
APA	Liu FZ,Zhu MF,Liu T,&Li BC.(2001).The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering.acta physica sinica,50(3),532-535.
MLA	Liu FZ,et al."The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering".acta physica sinica 50.3(2001):532-535.