The resistivity of negative temperature coefficient (NTC) thermistor material decreases exponentially with temperature. The NTC thermistor can be widely used for detection and control temperature devices, temperature compensation devices and surge current protection devices. There are some advantages about the Mn-Co-Ni-O NTC thermistor, such as thermal stability, high sensitivity, high accuracy, fast response. Current, as one of the focus of the NTC thermistor material, the thin film NTC thermistor material is an important functional material and widely used in the field of aerospace, electron industry, household appliances. In this paper, Mn-Co-Ni-O NTC film thermistor material with spinel structure is the main research object, it was prepared by different preparation process on Si substrates, such as sol-gel method. Our work is to prepare NTC thin film materials and make them crystallize at different annealing temperature. The main contents of our work are four points: (1)At first, the starting material were manganese acetate, nickel acetate and cobalt acetate, acetic acid solution was used as solvent, Mn-Co-Ni-O(MCN) thin films NTC thermistor with single-component structure were prepared on Si substrates by sol-gel preparation process, the annealing temperature was 650℃, 700℃, 750℃ and 800℃, respectively. The effects of different annealing temperature of the MCN thin films thermistor on the electrical properties, microstructure morphology and phase component were studied and discussed in this paper. The results showed that, when the annealing temperature is 650°C, spinel structure of the thin films was already formed. When the annealing temperature is 750°C, for the electrical properties, the phase purity, the surface density and other properties, the MCN thin film had superior properties than the other thermistor. (2)In the early experimental work, the NTC thin film material was prepared by sol-gel method; it was a single preparation process. In this article, alcohol thermal reaction was used for synthesis of Mn-Co-Ni-O thin film NTC thermistor. The results showed that: when the synthesis temperature is 150°C, then the reaction time is 12h, the Mn-Co-Ni-O thin film would be crystallized by alcohol-thermal reaction. Therefore, this was a feasible method that low temperature synthesis of manganese cobalt nickel thin film by alcohol-thermal reaction. However, obviously, there were some disadvantages such as the poor quality of the thin film and the adhesion reduced with the substrate. Therefore, we need to further improve the experimental process conditions to achieve the thin film thermistor with well performance. (3)The thin film NTC thermistors were deposited by single chemical component; there were a large number of experimental data and on the thin-film NTC thermistor material. We were alternating deposited by variety of chemical components Mn-Co-Ni-O nanoparticle composite films on Si substrate. The effects of the thin film on the phase composition, microscopic morphology were investigated. (4)The last, Mn1.5Co1.5-xNixO4(x=0,0.25,0.5,1.5) NTC thermistors were prepared by sol-gel method. The phase composition and the infrared absorption spectrum of the precursor powder were investigated. We systematically studied the effects of technological parameters of NTC thermistor material on their conductive mechanism and electrical properties. The results showed that Mn1.5Co1.5-xNixO4 NTC thermistor was prepared by the sol-gel process, sintering temperature at 750°C, sintering porcelain temperature of 1050°C, with good electrical performance and high sensitivity, controllable chemical composition.