Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure

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	Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure
	Qu B ; Zheng XH ; Wang YT ; Lin SM ; Yang H ; Liang JW
刊名	journal of crystal growth
	2001
卷号	226 期号:1 页码:57-61
关键词	characterization defects X-ray diffraction metalorganic vapor phase epitaxy nitrides semiconducting III-V materials GAN GROWTH EPITAXY
ISSN号	0022-0248
通讯作者	qu b,chinese acad sci,inst semicond,state key labs integrated optoelect,pob 912,beijing 100083,peoples r china.
中文摘要	the distribution of mixed phases and its dependence on the polarity of cubic gan epilayers are investigated by conventional x-ray pole figure and grazing incident diffraction (gid) pole figure. the hexagonal inclusions and cubic twins can be classified into two portions: one is formed with strict crystalline orientations, the other with crystalline misorientations. the former can be measured by conventional pole figures which reveal that the density of lamellate hexagonal grains and cubic twins located on (1 1 1)(ga) and ((1) over bar (1) over bar1)(ga) along [1 (1) over bar 0] direction are higher than those on ((1) over bar 1 1), and (1 (1) over bar 1)(n) along [110] direction. however, the low signals from tiny mixed phases with crystalline misorientations, detected by gid pole figures, distribute in a larger phi region near the [1 1 0] and [(1) over bar (1) over bar 0] directions with much weaker intensity, and in a smaller phi region near the [1 (1) over bar 0] and [(1) over bar 1 0] directions with slightly stronger intensity. (c) 2001 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12196]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Qu B,Zheng XH,Wang YT,et al. Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure[J]. journal of crystal growth,2001,226(1):57-61.
APA	Qu B,Zheng XH,Wang YT,Lin SM,Yang H,&Liang JW.(2001).Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure.journal of crystal growth,226(1),57-61.
MLA	Qu B,et al."Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure".journal of crystal growth 226.1(2001):57-61.