Relaxation of carriers in terbium-doped ZnO nanoparticles

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	Relaxation of carriers in terbium-doped ZnO nanoparticles
	Liu SM
刊名	chemical physics letters
	2001
卷号	343 期号:5-6 页码:489-492
关键词	NANOCRYSTALS PHOTOLUMINESCENCE LUMINESCENCE CENTERS
ISSN号	0009-2614
通讯作者	liu sm,no jiaotong univ,inst optoelect technol,beijing 100044,peoples r china.
中文摘要	terbium ions were successfully incorporated in nano-sized zinc oxide particles with a doping concentration up to 3% by using a wet chemical route. four narrow emission peaks of tb3+ ions and a broad emission band of the surface states on zno nano-hosts were observed for all tb-doped nanoparticles. relaxation of carriers from excited states of zno hosts to rare earth (re) dopants is disclosed by the fact that the emission intensity of tb3+ centers increases with increased tb content at the expense of the emission from surface defect states in zno matrix. (c) 2001 elsevier science b.v. all rights reserved.
学科主题	半导体化学
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12122]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu SM. Relaxation of carriers in terbium-doped ZnO nanoparticles[J]. chemical physics letters,2001,343(5-6):489-492.
APA	Liu SM.(2001).Relaxation of carriers in terbium-doped ZnO nanoparticles.chemical physics letters,343(5-6),489-492.
MLA	Liu SM."Relaxation of carriers in terbium-doped ZnO nanoparticles".chemical physics letters 343.5-6(2001):489-492.