Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots (vol 234, pg 354, 2001)

	Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots (vol 234, pg 354, 2001)
	Jiang DS; Xu B; Wang ZG
刊名	journal of crystal growth
	2002
卷号	236 期号:1-3 页码:499-499
ISSN号	0022-0248
通讯作者	jia r,chinese acad sci,inst semicond,natl lab supelattices & microstruct,pob 912,beijing 100083,peoples r china.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11962]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiang DS,Xu B,Wang ZG. Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots (vol 234, pg 354, 2001)[J]. journal of crystal growth,2002,236(1-3):499-499.
APA	Jiang DS,Xu B,&Wang ZG.(2002).Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots (vol 234, pg 354, 2001).journal of crystal growth,236(1-3),499-499.
MLA	Jiang DS,et al."Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots (vol 234, pg 354, 2001)".journal of crystal growth 236.1-3(2002):499-499.