Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer

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	Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer
	Han PD
刊名	journal of crystal growth
	2002
卷号	236 期号:1-3 页码:77-84
关键词	substrates heteroepitaxy metalorganic chemical vapor deposition gallium compounds nitrides INTERMEDIATE LAYER EPITAXIAL-GROWTH SILICON SAPPHIRE FILM
ISSN号	0022-0248
通讯作者	lu dc,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	high-quality gan epilayers were grown on si (1 1 1) substrate by metalorganic chemical vapor deposition. the growth process was featured by using an ultrathin aln wetting layer (wl) in combination with a low-temperature (lt) gan nucleation layer (nl). the full-width at half-maximum (fwhm) of the x-ray rocking curve for the gan (0 0 0 2) diffraction was 15 arcmin. the dislocation density estimated from tem investigation was found to be of the order of 10(9)cm(-2). the fwhm of the dominant band edge emission peak of the gan was measured to be 47 mev by photoluminescence measurement at room temperature. the ultrathin aln wl was produced by nitridation of the aluminium pre-covered substrate surface. the reflection high-energy electron diffraction showed that the aln wl was wurtzite and the surface morphology was like the nitridated surface of sapphire by the atomic force microscopy measurement. x-ray photoelectron spectroscopy measurement showed that si and sixny at a certain concentration were intermixed in the aln wl. this study suggests that by employing an appropriate wl combined with a lt nl, high-quality heteroepitaxy is achievable even with large mismatch. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11954]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han PD. Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer[J]. journal of crystal growth,2002,236(1-3):77-84.
APA	Han PD.(2002).Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer.journal of crystal growth,236(1-3),77-84.
MLA	Han PD."Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer".journal of crystal growth 236.1-3(2002):77-84.