Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells | |
Wan SP ; Xia JB | |
刊名 | solid state communications |
2002 | |
卷号 | 122期号:5页码:287-292 |
关键词 | quantum wells semiconductors piezoelectricity optical properties OPTICAL-ABSORPTION GAN HETEROSTRUCTURES SPECTROSCOPY CONSTANTS ENERGIES LIFETIME SPECTRA FIELDS INN |
ISSN号 | 0038-1098 |
通讯作者 | wan sp,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. 电子邮箱地址: wanshoupu@hotmail.com |
中文摘要 | excitonic states in alxga1-xn/gan quantum wells (qws) are studied within the framework of effective-mass theory. spontaneous and piezoelectric polarizations are included and their impact on the excitonic states and optical properties are studied. we witnessed a significant blue shift in transition energy when the barrier width decreases and we attributed this to the redistribution of the built-in electric field between well layers and barrier layers. for the exciton the binding energies, we found in narrow qws that there exists a critical value for barrier width, which demarcates the borderline for quantum confinement effect and the quantum confined stark effect. exciton and free carrier radiative lifetimes are estimated by simple argumentation. the calculated results suggest that there are efficient non-radiative mechanisms in narrow barrier qws. (c) 2002 elsevier science ltd. all rights reserved. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/11900] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Wan SP,Xia JB. Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells[J]. solid state communications,2002,122(5):287-292. |
APA | Wan SP,&Xia JB.(2002).Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells.solid state communications,122(5),287-292. |
MLA | Wan SP,et al."Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells".solid state communications 122.5(2002):287-292. |
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