Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer

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	Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer
	Jin P; Li CM; Ye XL; Xu B
刊名	journal of applied physics
	2002
卷号	92 期号:1 页码:511-514
关键词	MOLECULAR-BEAM EPITAXY 1.3 MU-M TEMPERATURE-DEPENDENCE GROWTH GAAS LASERS
ISSN号	0021-8979
通讯作者	zhang zy,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	we have fabricated a quantum dot (qd) structure for long-wavelength temperature-insensitive semiconductor laser by introducing a combined inalas and ingaas overgrowth layer on inas/gaas qds. we found that qds formed on gaas (100) substrate by inas deposition followed by the inalas and ingaas combination layer demonstrate two effects: one is the photoluminescence peak redshift towards 1.35 mum at room temperature, the other is that the energy separation between the ground and first excited states can be up to 103 mev. these results are attributed to the fact that inas/gaas intermixing caused by in segregation at substrate temperature of 520 degreesc can be considerably suppressed by the thin inalas layer and the strain in the quantum dots can be reduced by the combined inalas and ingaas layer. (c) 2002 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11872]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P,Li CM,Ye XL,et al. Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer[J]. journal of applied physics,2002,92(1):511-514.
APA	Jin P,Li CM,Ye XL,&Xu B.(2002).Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer.journal of applied physics,92(1),511-514.
MLA	Jin P,et al."Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer".journal of applied physics 92.1(2002):511-514.