The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs

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	The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs
	Jiang DS
刊名	journal of crystal growth
	2002
卷号	243 期号:2 页码:261-266
关键词	photoluminescence molecular beam epitaxy quantum wells III-V semiconductors MOLECULAR-BEAM EPITAXY SINGLE-QUANTUM-WELL LUMINESCENCE GAAS LOCALIZATION BEHAVIOR LAYER
ISSN号	0022-0248
通讯作者	liang xg,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要	we investigated the effects of concomitant in- and n-incorporation on the photoluminescence (pl) of gainnas grown by molecular beam epitaxy. in comparison with the n-free gainas epilayer, the pl spectra of the gainnas epilayer exhibit an anomalous s-shape temperature dependence of dominant luminescence peak. through further careful inspection, two pl peaks are clearly discerned and are associated with the interband excitonic recombinations and excitons bound to n-induced isoelectronic impurity states, respectively. by comparing the pl spectra of gainnas/ gaas quantum wells (qws) with those of in-free ganas/gaas qws grown under similar conditions, it is found that the concomitant in- and n-incorporation reduces the density of impurities and has an effect to improve the intrinsic optical transition of gainnas, but also enhance the n-induced clustering effects. at last, we found that rapid thermal annealing can significantly reduce the density of n-induced impurities. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11802]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiang DS. The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs[J]. journal of crystal growth,2002,243(2):261-266.
APA	Jiang DS.(2002).The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs.journal of crystal growth,243(2),261-266.
MLA	Jiang DS."The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs".journal of crystal growth 243.2(2002):261-266.