Microstructure of a-SiOx : H

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	Microstructure of a-SiOx : H
	Wang YQ ; Liao XB ; Diao HW ; Cheng WC ; Li GH ; Chen CY ; Zhang SB ; Xu YY ; Chen WD ; Kong GL
刊名	science in china series a-mathematics physics astronomy
	2002
卷号	45 期号:10 页码:1320-1328
关键词	a-SiOx : H microstructure bonding configuration CHEMICAL-VAPOR-DEPOSITION AMORPHOUS-SILICON ELECTRONIC-PROPERTIES SIO2/SI INTERFACE OXYGEN FILMS VIBRATIONS ALLOYS SYSTEM
ISSN号	1006-9283
通讯作者	wang yq,chinese acad sci,inst semicond,state lab surface phys,beijing 100083,peoples r china.
中文摘要	a set of a-siox:h (0.52 < x < 1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (pecvd) method at the substrate temperature of 250degreesc. the microstructure and local bonding configurations of the films are investigated in detail using micro-raman scattering, x-ray photoelectron spectroscopy (xps) and fourier transform infrared spectroscopy (ftir). it is found that the films are structural inhomogeneous, with five phases of si, si2o:h, sio:h, si2o3:h and sio2 that coexist. the phase of si is composed of nonhydrogenated amorphous silicon (a-si) clusters that are spatially isolated. the average size of the clusters decreases with the increasing oxygen concentration x in the films. the results indicate that the structure of the present films can be described by a multi-shell model, which suggests that a-si cluster is surrounded in turn by the subshells of si2o:h, sio:h, si2o3:h, and sio2.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11772]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang YQ,Liao XB,Diao HW,et al. Microstructure of a-SiOx : H[J]. science in china series a-mathematics physics astronomy,2002,45(10):1320-1328.
APA	Wang YQ.,Liao XB.,Diao HW.,Cheng WC.,Li GH.,...&Kong GL.(2002).Microstructure of a-SiOx : H.science in china series a-mathematics physics astronomy,45(10),1320-1328.
MLA	Wang YQ,et al."Microstructure of a-SiOx : H".science in china series a-mathematics physics astronomy 45.10(2002):1320-1328.