With the rapid development of aerospace industry and digital technology, the digital to analog converter, as a digital signal into an analog signal circuit, has been widely used in the field of satellite, aerospace and other technologies in order to improve the signal processing capability. However, with a large number of high-energy particles and rays in space environment, the performance of DACs, working in the extreme radiation environment, will be degraded and or even failure to satellites and spacecrafts. DAC complex design challenges the research of its total dose irradiation, especially in recent years. The effect in fabrication process and structure for the improvements of the performance of DAC results circuit to be more complex. With the development of the semiconductor production technology, fabrication process is not just a single technology, but become more and more complex, such as the mixed process of thin film resistor technology and complementary bipolar CMOS process, LC2MOS (Linear compatible CMOS) and BiCMOS process. The above three processes are introduced to modern data converter production. The introduction of hybrid technology improves the performance of DAC, and yet comes the problem to the research of DAC total dose irradiation. According to the structure, different application field focus on different performance, including the resolution, conversion speed and stability. In order to meet the need of different application areas, a variety of device structures are designed to produce DAC, including R-2R ladder network architecture, current steering architecture and sigma-delta architecture. In order to investigate the mixed process DAC total dose irradiation and the effect of device architecture and process on the DAC total dose irradiation, it is necessary to study the DAC total dose irradiation of different production process and device architecture. Although some of the DAC radiation effects have been reported, there is no systematic research of total dose irradiation and the law of radiation damage for DAC of different mixing process and device architecture under 60Co gamma-ray environment. In this paper, we firstly systematically carry out the related research which provides the first experimental data for the DAC total dose irradiation assessment of different process and structure. The investigation of mixing process DAC total dose irradiation mainly contains the following two aspects: The impact of dose rate on the mixing process DAC total dose irradiation has been obtained. Select high and low dose rate in the radiation test on DAC sample to determine whether the mixing process DAC total dose irradiation shows ELDRS. The impact of bias on the DAC total dose irradiation has been studied by means of determination of the total dose irradiation in the different operating modes of DAC sample. Our experiment study on these two areas gives the result of the total dose irradiation of mixing process DAC, and contributes to the further analysis of the rules and the mechanism of the mixing process DAC radiation damage. Select four mixing process DACs from the two companies produced by CBCMOS, LC2MOS and BiCMOS process and two kinds of architectures including both the R-2R the ladder network architecture and current steering architecture. Test the total dose irradiation of the four kinds of devices under the different dose rates and bias conditions. Through contrast analysis of test results, the relation of the mixing process DAC radiation damage mode has been obtained. Although the radiation resistance of DACs made with different process and structure is different, the radiation damage model and dose-rate effect perform certain regularity: Device architecture has a great relationship with the failure mode of DACs, and the radiation failure function curves of DACs with R-2R architecture shows obviously ladder distortion; Production process is related to the dose-rate effect of the DACs. LC2MOS process DAC shows significant time-dependent effect, because of its fabrication based on CMOS process. The parameters of DAC architected with CBCMOS process exhibit different dose-rate effect in that there are part of the parameters performing time-dependent effects and part of the parameters more sensitive to low dose rate, which comes from the CBCMOS combining precision CB process with low power CMOS logic. The dose-rate effect of BiCMOS DAC is related to the process of radiation sensitive module. In summary, in this paper we firstly discuss the impact of radiation dose rate and bias state on mixing process DAC total dose irradiation, and preliminarily obtain the radiation damage model of mixing process DAC and the mechanism of radiation damage. Then, through contrast analysis of the law of radiation damage of mixing process DAC with different process and structure, we obtain the similarities and differences of DAC radiation damage mode fabricated with different process and structure, and the experimental basis for the establishment of assessment methods of mixing process DAC total dose irradiation is provided at last.