Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer

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	Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer
	Jin P; Ye XL; Li CM; Xu B
刊名	solid state communications
	2003
卷号	126 期号:7 页码:391-394
关键词	nanostructures semiconductors optical properties EPITAXY
ISSN号	0038-1098
通讯作者	zhang zy,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	in this report we have investigated the temperature dependence of photoluminescence (pl) from self-assembled inas quantum dots (qds) covered by an inalas/ingaas combination layer. the ground state experiences an abnormal variation of pl linewidth from 15 k up to room temperature. meanwhile, the pl integrated intensity ratio of the first excited state to the ground state for inas qds unexpectedly decreases with increasing temperature, which we attribute to the phonon bottleneck effect. we believe that these experimental results are closely related to the partially coupled quantum dots system and the large energy separation between the ground and the first excited states. (c) 2003 elsevier science ltd. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11566]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P,Ye XL,Li CM,et al. Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer[J]. solid state communications,2003,126(7):391-394.
APA	Jin P,Ye XL,Li CM,&Xu B.(2003).Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer.solid state communications,126(7),391-394.
MLA	Jin P,et al."Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer".solid state communications 126.7(2003):391-394.